Abstract: Half-bridge insulated-gate bipolar transistor (IGBT) modules are widely used in power electronic devices, and the high-speed switching of IGBTs in the modules can cause serious ...
Abstract: The die-attach layer is a vulnerable structure that is important to the reliability of an insulated-gate bipolar transistor (IGBT) module. A new failure mechanism named fatigue crack network ...
Further demand for the new battery module expected in the Japanese market for other OEM opportunities with sales through Sumitomo Corporation Power and Mobility Further strengthens the Company’s ...
These modules were custom designed for a global construction equipment OEM and feature a new NMC based 51Ah cell format that features Electrovaya’s proprietary Infinity technologies which ...