This study introduces a cross field-effect transistor (CrossFET) design, which features two orthogonally crossed transistors: an n-channel field-effect transistor (NFET) and a p-channel field-effect ...

Abstract: In this study, we proposed a novel p-GaN/p-AlGaN/AlGaN/GaN heterojunction field-effect transistor (HFET). When a selective etching process is used to precisely etch the p-GaN layer of a ...

In today’s information age, high performance nonvolatile memory devices have become extremely important. Despite their potential, existing devices suffer from limitations, such as low operation speed, ...