In this paper, the reliability performance of 1.2-kV silicon carbide (SiC) power mosfet modules is investigated through the combination of both accelerated power-cycling tests and short-circuit tests.

The research ' 3D-Millimeter Wave Integrated Circuit (3D-mmWIC): A Gold-Free 3D-Integration Platform for Scaled RF GaN-on-Si ...

The advanced semiconductor material gallium nitride will likely be key for the next generation of high-speed communication ...