The research ' 3D-Millimeter Wave Integrated Circuit (3D-mmWIC): A Gold-Free 3D-Integration Platform for Scaled RF GaN-on-Si ...

The advanced semiconductor material gallium nitride will likely be key for the next generation of high-speed communication ...

OTL Power Amplifiers (See figure 1.) The basic types of configuration evolve around either complementary pairs, or the full or half-bridge configuration. The complementary circuit requires a split ...

While integrated amplifier designs are usually seen as some sort of compromise compared with separate pre/power alternatives, given the price it is fair to assume that isn’t the case here. The F-01’s ...

Single transistor holds the potential to power a high-performance amplifier with the right components and setup. By following precise techniques, this transformation enhances audio output ...

NTT and Tokyo Tech have designed a power amplifier circuit 6 that achieves high-output power in the 300 GHz band and realized its fabrication by using NTT’s proprietary InP HBT technology.