Intel says its cutting-edge 18A process node is 'now ready' and that tape-out begins in 1H 2025, ready to compete with ...

TI's space-grade GaN FET gate drivers support the entire voltage range needed to design satellite power systems.

Texas Instruments (TI) has unveiled what it claims is the first family of radiation-hardened and radiation-tolerant ...

Until 2018, DRAM peripheral transistors were predominantly made in planar logic MOSFET technology with poly-Si/SiO 2 or ...

EnCharge claims 150 TOPS/watt, a 20x performance-per-watt edge Interview AI chip startup EnCharge claims its analog ...

Discover the possibilities of twisted bilayer graphene as a replacement for silicon in integrated circuits and it's potential.

In DRAM chips, besides access transistors, peripheral transistors must meet stringent requirements which preclude a ...

Companies like Lake Shore Cryotronics that specialize in sensitive measurement instruments for researchers must create ...

Dickerson noted the company’s leadership in device architecture inflections such as gate-all-around transistors, backside power delivery, and advanced packaging, which are driving growth opportunities ...

A new technical paper titled “Simulation of Vertically Stacked 2-D Nanosheet FETs” was published by researchers at Università di Pisa and TU Wien. Abstract “We present a simulation study of vertically ...

Manufacturing is something the semiconductor industry wanted to forget about for decades. It’s now front and center and ...