The Senior Pillbox aims to provide a low-cost, fully electronic circuit-based solution with minimal human intervention ...
Abstract: The tri-gate MOSFET is a vertical power transistor with multiple sub-micron FinFET channels. The FinFET structure increases the current-carrying width of the MOS inversion layer without ...
Abstract: A physical assessment of the lateral gate-all-around (GAA) nanosheet transistor (NSFET) at the G40M16 node (gate length = 12 nm projected for 2028) of the newly defined beyond-Moore ...
Using a multi-shunt-based current-monitoring circuit with a 50-MHz op amp delivers an overcurrent detection response time of ...
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