TSMC stated that its N2 fabrication technology got more new tape outs than predecessors (as TSMC now risks producing N2 chips for smartphone and HPC customers), so the defect density decrease ...

TSMC had already provided low ... indicated that Intel 4 (back then called 7nm) would land somewhere between N5 and N3 with regards to transistor density. However, based on current information ...

along with a 1.15X increase in transistor density compared to the previous 3nm process. Most of these improvements stem from TSMC’s introduction of gate-all-around (GAA) nanosheet transistors ...

TL;DR: TSMC's advanced 2nm process node, featuring GAAFET architecture, matches 5nm defect density and surpasses 3nm and 7nm stages ... be using all-around gate transistor (GAAFET) architecture ...

TSMC's 2nm process node is cruising through development and is already showing better defect rates than 3nm and 7nm did at the same stage. According to Taiwanese outlet Ctee, the node now matches ...

Each successive TSMC node surpasses its predecessor in terms of transistor density, performance, and efficiency. Late last year, it emerged that TSMC had already demonstrated prototype 2nm chips ...

Why it matters: The cost of progress is getting steeper with each new manufacturing process TSMC develops ... of 10nm and 7nm with the A11 and A12. Those two chips saw transistor density hikes ...

This is in addition to offering advanced packaging technologies for client and AI/HPC applications ... in general, and TSMC in particular. Maximum transistor density and performance efficiency.

Additionally, transistor density ... TSMC started a special microchip miniaturization process, called 5nm FinFET technology, that played a crucial role in smartphone and high-performance computing ...