Abstract: We present a novel charge-based compact model for drain current in fin-shaped GaN high-electron-mobility transistors (Fin-HEMTs). A positive threshold voltage shift is observed in Fin-HEMTs ...
Abstract: In continuation to the preceding article, this part presents a study of electrical transport in Ohmic contact carbon nanotube thin film transistors (CNT TFTs). Here, the transistor model is ...
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