While the tie-up between TDK and CEA has demonstrated that spin-memristors can serve as the basic element of a neuromorphic device, manufacturing them requires the integration of semiconductor and ...

Schematic of the proposed device structure for neuromorphic spintronic memristors. The write path is between the terminals through the top layer (black dotted line), the read path goes through the ...

Based on our landmark research, the authors received a 2013 Army Outstanding Technical Research and Development Achievement Award for the "Spintronic Radar Detectors for Multifunctional Armor." ...

A spintronic memory device with tilted anisotropy achieves 11 stable, electrically controlled states and low cycle-to-cycle variation (2%), enabling reliable emulation of synaptic behavior.

More information: Shih-Hung Cheng et al, Gate-controllable two-dimensional transition metal dichalcogenides for spintronic memory, Journal of Alloys and Compounds (2024). DOI: 10.1016/j.jallcom ...

Long Shibing from the University of Science and Technology of China (USTC) of the Chinese Academy of Sciences (CAS) has, for ...

An advanced material that could help bring about next-generation "spintronic" computers has revealed one of its fundamental secrets to a team of scientists. An advanced material that could help ...

Memristors, a type of circuit element based on magnetic flux, were first proposed back in 1971, but remained limited to the realm of theory until 2008. That's when some researchers from HP Labs ...

Therefore, exploring layered materials in altermagnets is essential for developing high-density, high-speed, and low-energy-consumption spintronic devices. Prof. Liu's observation of a two ...

Spintronic devices, which leverage electron spin rather than charge, present a promising alternative. In particular, transition metal dichalcogenides (TMD) materials are attractive due to their unique ...