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However, the availability of wide bandgap (WBG) power devices, including Silicon Carbide (SiC) and Gallium Nitride (GaN) transistors, is transforming the industry by offering increased efficiency, ...

State Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, PR China The Center of Materials ...

A leading Chinese wafer foundry, Epiworld International ... systems are based either on gallium nitride (GaN) or silicon carbide (SiC) wafers, which offer higher power capacity and resilience ...

Customs data showed that silicon wafer exports in March 2025 reached 7,000 mt, up 32.1% MoM and up 1.1% YoY.

Silicon Wafer Exports in March 2025 Apr 21, 2025, at 5:26 pm Customs data showed that silicon wafer exports in March 2025 reached 7,000 mt, up 32.1% MoM and up 1.1% YoY.

The market is growing, driven by the emergence of III-V materials such as silicon carbide (SiC) and gallium nitride (GaN), growing demand for high-temperature applications across increasing ...

SemiQ has released three 1.2kV three-phase silicon carbide mosfet bridges in 62.8 x 33.8 x 15mm press ... Each is tested to over 1,350V with 100% wafer-level burn-in, said the company, which is ...

Abstract: The planar-gate SiC MOSFET exhibits multiple conduction modes when operating in the third quadrant. As the current injection level increases, such as during surge events or other extreme ...