This paper reports the research results of high power silicon carbide Schottky barrier diode (SiC SBD) in three aspects, namely the quality and type selection of SiC materials, device structure of SBD ...

The National Semiconductor Translation and Innovation Centre for Gallium Nitride will offer companies research and ...

This paper proposes the change of focus ring (FR) material from silicon (Si) to silicon carbide (SiC) to extend the lifetime of the oxide etch chamber. This is important because the lifetime extension ...

As a semiconductor material with exceptional optoelectronic properties, ultrathin crystal silicon (c-Si) is widely applied to wearable electronics. However, ultrathin c-Si is highly susceptible to ...

In this paper, we utilize density functional theory to explore the role of carbon depletion on crystal morphology in group IVB and VB transition metal carbides (TMCs). The surface energies of ...