Researchers have announced the demonstration of high-speed spin-orbit-torque magnetoresistive random access memory cell compatible with 300 mm Si CMOS technology.

DJI a lansat în sfârșit pe piața globală prima sa cameră de acțiune la 360°, Osmo 360. Competitor direct pentru Insta360 X5 ...

By demonstrating those values, repeatedly and reproducibly, on a 300mm Si MOS quantum dot process, it should be possible to make large-scale quantum computers based on Si quantum dots. Si quantum dot ...

Built using their proprietary Eye-On-Si CMOS imaging technology, the 1600 x 1200 pixel Sapphire CMOS image sensor is Teledyne e2v’s newest product from the Sapphire chip family.

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In the 2023-24 Budget allocation, Rs 1,800 crores were for Compound Semi / Display / ATMP / OSAT manufacturing and only Rs 1,000 crores for an order of magnitude higher capex intensive Si based ...

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As a first part of my Ph.D. work, I evaluated this promising contact scheme in terms of contact resistivity and CMOS compatibility—for 7nm and beyond CMOS. I screened several insulator materials ...

Imec and its partners in the GaN industrial affiliation program (IIAP) have produced device-quality wafers with GaN/AlGaN layers on 200mm silicon wafers. With these wafers, functional GaN MISHEMTs ...

Researchers at Tohoku University have announced the demonstration of high-speed spin-orbit-torque (SOT) magnetoresistive random access memory cell compatible with 300 mm Si CMOS technology. The ...