Alliance Memory products, Soitec collaborating with Powerchip, the UKESF launching the Semiconductor STEP programme, Broadcom ...

Anglia Components has signed an agreement to support and supply a full range of legacy and new memory products.

Anglia Components  signed an agreement to support and supply the full range of legacy and new memory products, including SRAM ...

Anglia Components has signed an agreement to support and supply the full range of legacy and new memory products, including ...

At over 2,500 t/s, Cerebras claims to have has set a world record for LLM inference speed on the 400B parameter Llama 4 ...

Problems and solutions for improving performance with more data. Demand for new and better AI models is creating an ...

Japanese scientists have developed a spin-orbit torque magnetoresistive random-access memory (SOT-MRAM) device with the ...

In this paper, we study how to design such a heterogeneous DRAM chip for improving both performance and energy efficiency. In particular, we found that, if we want to design an SRAM row cache in a ...

Abstract: This work firstly demonstrates a monolithic 3D architecture with ultra-high density IGZO/Si SRAM and IGZO 2T0C DRAM (M3D-SD) integrated in 3-tiers. By incorporating ultra-low leakage IGZO ...

NEO Semiconductor, a leading developer of innovative technologies for 3D NAND flash memory and 3D DRAM, has announced the latest advancement in its groundbreaking 3D X-DRAM technology family — the ...

Samsung has increased the cost of DRAM, reportedly due to stockpiling brought on by looming tariffs. The change will likely have adverse effects on end products, like Android devices. Samsung’s ...