Thus, RRAM is robust and efficient for both code storage and data logging in the same memory device. Through optimizations such as byte re-writability and eliminating erase operations during data ...
In RRAM, this memory effect arises from the formation and dissolution of a conductive filament (CF) in the insulator layer of ...
and Flash memory (Flash), emerging non-volatile memories such as Resistive Random Access Memory (RRAM) and Magneto-resistive Random Access Memory (MRAM) have received significant attention. Both are ...
Samsung has used advanced computer modeling to accelerate the development of Selector-Only Memory (SOM), a new memory ...
During the panel, Jung Hoon Lee, head of DRAM device and process integration at ... For this, the industry is looking at several next-generation memory technologies, such as FeFETs, MRAM, phase-change ...
A new technical paper titled “Experimental Assessment of Multilevel RRAM-Based Vector-Matrix Multiplication Operations for In-Memory Computing” was published by researchers at IHP (the Leibniz ...