Philips Semiconductor introduces a P-Channel FET in a microTrench MOS. Supplied in the industry-standard SOT23 package, the 20 V PMV65XP brings the μTrenchMOS blend of performance and small size to ...

At this point T2 starts to turn off, which causes the gate voltage of the p-channel jfet T1 to rise, which turns it off. This positive feedback turns both devices off completely in a few µs, and ...

Amplifier A 1 forces the drain-source voltages of both power FET M M and sense FET M s to be equal, and since their gate-source voltages are already equal (i.e., shorted together), ... P. Givelin, M.

In the semiconductor industry, the use of radiation-hardened power MOS devices to avoid latchup is less common than hardening logic and memories to avoid single-event upsets. Going the less ...

Toshiba Electronics Europe has added two new 150V N-channel power MOSFET products based upon their latest generation U-MOS X-H Trench process. Credit: Toshiba Electronics Europe The TPH1100CQ5 and ...

The eGaN FET is a viable and efficient alternative to standard MOSFET solutions in Power over Ethernet (PoE) applications. These FETs enable higher operating frequencies that can be leveraged into ...

Taiwan-based power MOSFET and diode suppliers, such as Force-MOS Technology, which are primarily involved in the supply chain for notebooks and other PCs, anticipate demand will recover in mid-2024.