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Tech Xplore on MSNHow sputtering could drive the adoption of high-performance ScAlN-based transistors
Gallium nitride (GaN)-based high electron mobility transistors (HEMTs) are a type of field-effect transistors (FETs) designed to operate at very high frequencies with low noise. As such, they have ...
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The Daily Galaxy on MSNChina’s Engineers May Have Just Removed the Final Barrier to 1,000 KM/H Maglev Trains That Will Make Flights Obsolete
Researchers in China say they have found a way to eliminate one of the biggest obstacles facing magnetic levitation (maglev) ...
More than two decades after Concorde’s retirement, commercial aviation is once again preparing to break the sound barrier.
Automotive Nonwoven Fabrics Market UK's automotive nonwoven fabrics market grows at 3.8% CAGR, driven by lightweight materials, custom inte ...
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