The maximum drain current is approximately −4.5 mA/mm and the transconductance is 0.75 mS/mm, which decreases as the phosphorus concentration in the n-type diamond epilayer increases. The ...

The surface-activated bonding method successfully achieved the room temperature bonding of a 1-inch polycrystalline diamond wafer and a 2-inch silicon wafer, yielding a bonded area of approximately 90 ...