Contact resistance at the interface between the semiconductor and metallic MoTe2 is shown to be very low. Barrier height was lowered by a factor of 7, from 150meV to 22meV.

In traditional CMOS technology, metal-semiconductor (MS) contact schemes, with transition-metal silicides (such as nickel (Ni) silicides) on the metal side, are used to form the source/drain contacts.

Prior knowledge needed: ECEA 5630 Semiconductor Physics, ECEA 5631 Diode Junction and Metal Semiconductor Contact, Understanding of active semiconductor devices, basic electronics, Circuits & Systems ...

Courses Semiconductor Physics Diode - PN Junction and Metal Semiconductor Contact Transistor - Field-Effect Transistor and Bipolar Junction Transistor This specialization can be taken for academic ...

At its core, computing relies on manipulating electric currents and fields. But as devices shrink to the nanometer scale, controlling these flows becomes increasingly difficult. Wires and transistors ...

The history of the diode is a fun one as it’s rife with accidental discoveries, sometimes having to wait decades for a use for what was found. Two examples of that are our first two topics: t… ...

In May 2021, IBM announced it had produced 2 nm class transistor using three silicon layer nanosheets with a gate length of 12nm. “We resolved one of the biggest problems in miniaturizing ...

Charge transport in hybrid silicon solar cells Date: August 17, 2015 Source: Helmholtz-Zentrum Berlin für Materialien und Energie Summary: A surprising discovery has been made about hybrid ...

Due to the improved contact interface, 2D semiconductor transistors fabricated using this technique exhibited more than 95% reduction in off-state current and a 50% decrease in subthreshold swing ...

It is a polymorphic material, meaning that it can be used both as metal and as semiconductor. Contact resistance at the interface between the semiconductor and metallic MoTe2 is shown to be very low.