Samsung's first 3nm GAA process node utilizing MBCFET will allow up to 35 percent decrease in area, 30 percent higher performance or 50 percent lower power consumption compared to the 5nm process. In ...

Node transitions are challenging, eg., GAA. It is a three-horse race (now ‘2’)? TSMC N2 (GAAFET), Intel 18A (RibbonFET), and Samsung SF2 (MBCFET) are leaders. Comparing Intel's 18A and TSMC's N2, ...