The team has also developed an innovative hot-emitter transistor (HOET), achieving an ultralow sub-threshold swing of less than 1 mV/dec and a peak-to-valley current ratio exceeding 100.

These electrons are zippy and help the transistor switch rapidly, but they also tend to travel up towards the gate and leak out. To prevent them from escaping, the device can be capped with a ...

Diodes Incorporated has introduced a new transistor array. The DIODES™ ULN62003A consists of seven 500 mA-rated open-drain transistors, where all their sources are connected to a common ground ...

ROHM has developed a 30 V N-channel metal-oxide semiconductor field-effect transistor (MOSFET) — AW2K21 — in a common-source ...

Start-up HVVi recently introduced the three-member HVVFET (high-voltage-vertical-field-effect-transistor) family of RF-transistor products. Targeting pulsed-radar and avionics applications, the ...

TOKYO-- (BUSINESS WIRE)-- Toshiba Corporation (TOKYO: 6502) today announced the launch of a new line-up of low input current type transistor output photocouplers that guarantee high CTR (Current ...

A better way to build a high current, high power load is to control each MOSFET separately, avoiding the current imbalance due to threshold spread. Figure 2 shows two such circuit blocks in parallel, ...

Diodes Incorporated (Diodes) (Nasdaq: DIOD) has introduced a new transistor array. The DIODES™ ULN62003A consists of seven 500mA-rated open-drain tran ...