Abstract: Commercially available normally-off GaN power high-electron-mobility transistor (HEMT) devices have typically adopted a p-GaN gate structure. In the gate region, there exist a Schottky ...

Department of Semiconductor Materials Engineering, Wrocław University of Science and Technology, Wyspiańskiego 27, Wrocław 50-370, Poland ...

Abstract: Vertical structure GaN power devices fabricated on freestanding GaN substrates have high potentials in ideally efficient energy conversion systems. This letter describes successful ...