It is widely-known that wide bandgap semiconductor (e.g. SiC and GaN) based power electronic converters are responsible for high level of conducted electromagnetic interference (EMI) measured ...

Two-dimensional (2D) release layers are commonly used to realize flexible nitride films. Here, high-quality, large-area, and transferable nitride films can be precisely controlled grown on ...

A monolithic bidirectional switch based on anti-paralleled two reverse blocking p-GaN HEMTs has been proposed and demonstrated in this work. The recessed Schottky drain technique is utilized to ...