Based on Neo's estimates, 3D X-DRAM technology can achieve 128 Gb density with 230 layers, which is eight times today's DRAM density. NEO Semiconductor said its cell array structure is based on ...

3D X-DRAM employs a 3D NAND-like DRAM cell array structure based on capacitor-less floating body cell technology, NEO Semiconductor explains. 3D X-DRAM chips can be manufactured with the same ...

Compared to current 2D solutions, 3D-XDRAM allows DRAM modules to be vertically (3D) stacked on top of each other to enhance density and overall memory capacity. Neo’s new 3D X-DRAM technology uses a ...

NEO Semiconductor has announced progress on its new 3D X-DRAM technology, with new 1T1C and 3T0C chip designs increasing DRAM speeds by an order of magnitude for tomorrow’s top-end computing.

SAN JOSE, Calif., May 13, 2024 /PRNewswire/ -- NEO Semiconductor, a leading developer of innovative technologies for 3D NAND flash and DRAM memory, today announced a performance boosting Floating ...

Seoul, Korea: Mass production of 1Gb DDR2 DRAM using 60nm process technology is underway via Samsung Electronics. The new technology increases production efficiency by 40% over ...

With these three tools, we first take a macroscopic view of modern DRAM chips to uncover the size, structure, and operation of their subarrays, memory array tiles (MATs), and rows. Then, we analyze ...

As a former DRAM test engineer, I concur with Hat's assessment. We had DRAM designers working on state of the art DDR DRAMs who were designing 4k and 16k DRAMs years ago.