New alloy Ni₄W enables field-free magnetization, promising faster, energy-efficient memory tech for AI, electronics, and HPC systems.

How much is proximity worth? For memory, maybe you get away with an arms-length relationship if you give it more to do.

Pure Storage evolves its all-flash offer across multiple workloads while embracing cloud models in data management, ...

SK Hynix has unveiled a long-term roadmap for next-generation DRAM technologies, laying out a vision that aims to drive sustainable innovation over the next 30 years as the global semiconductor ...

The 4F² * VG ** platform is a next-generation memory technology that minimizes the cell area of DRAM and enables high-integration, high-speed and low-power through a vertical gate structure.

It's been years since Ubisoft announced its Splinter Cell remake, but the company seems to be hinting at a Sam Fisher announcement.

Could 'pausing' cell death be the final frontier in medicine on Earth and beyond? Date: May 30, 2025 Source: University College London Summary: The process of necrosis, a form of cell death, may ...

Dynamic charge loss of next generation DRAM with a cell array transistor consisting of a bulk-less thin body was studied. The relationship between dynamic charge loss and floating body effect during ...

For example, the burden of screening for DRAM cell defects after HBM die stacking at the wafer level now falls to the end user. This raises questions such as: How will the user handle any vendor ...

Micron's memory technology is taking another step forward with the launch of its new 1γ (1-gamma) DRAM, pushing DDR5 speeds to 9200 MT/s and LPDDR5X to an impressive 9600 MT/s.