A new CMOS active pixel image sensor is reported. The sensor uses a 2.0 /spl mu/m double-poly, double-metal foundry CMOS process and is realized as a 128/spl times/128 array of 40 /spl mu/m/spl ...

The prototype was fabricated in a TSMC 3-D-stacked 45/65-nm CMOS technology, featuring backside illumination (BSI) SPAD detectors on the top tier, and readout circuit on the bottom tier. The sensor ...