Abstract: We propose a compact model for nanosheet FETs that take the effects of quantum confinement into account. The model captures the nanosheet width and thickness dependence of the electrostatic ...
Abstract: We present a novel charge-based compact model for drain current in fin-shaped GaN high-electron-mobility transistors (Fin-HEMTs). A positive threshold voltage shift is observed in Fin-HEMTs ...
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