At PCIM in Nuremberg, Germany, I sat down with Gerald Deboy, fellow at Infineon Technologies, to discuss the evolving power needs of next-generation AI data centers. At PCIM in Nuremberg, Germany, I ...

The new GaN power device is engineered to replace legacy low-voltage silicon MOSFETs in demanding power applications. Efficient Power Conversion (EPC) has introduced the EPC2366, a 40 V, 0.8 mΩ device ...