Abstract: Terahertz wave was detected in 1.0 THz using InAs MOS-HEMT as a non-biased (cold) FET power detector at room temperature. Terahertz power detector was fabricated on quartz glass substrate by ...

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To further improve the IC implementation efficiency, this detector also uses a candidate-sharing structure for partial Euclidean distance calculation and a two-stage sorter for survivor node selection ...