News

Texas Instruments and NVIDIA have partnered to develop 800V HVDC power distribution systems aimed at powering the next generation of AI data centers.
Powering the semiconductor future through collaboration, innovation & sustainability. SEMI tackles talent gaps, supply chains & net-zero goals while driving AI, quantum, and packaging tech.
Renesas’s single-stage, bidirectional GaN-based microinverter could redefine the future of energy conversion and distributed power systems. As electrification expands across sectors like solar energy, ...
Texas Instruments (TI) has released a new generation of single-chip battery fuel gauges that use its revolutionary adaptive Dynamic Z-Track TM technology. This is a big step forward in battery ...
As widely reported by the media, Taiwan Semiconductor Manufacturing Corporation (TSMC), the world’s leading foundry, will abandon gallium nitride, the rising star of power management and RF ...
Magnachip Semiconductor Corporation has announced the launch of its latest 80V MXT MV MOSFET, the MDLT080N017RH, which introduces a TOLT (TO-Leaded Top-Side Cooling) package designed for superior heat ...
Renesas’s single-stage, bidirectional GaN-based microinverter could redefine the future of energy conversion and distributed power systems.
In the previous issue we examined a signal generator in Mathematica environment. In real generators, the deformation of the waveform produced must be taken into account.
In the field of power electronics, modelling circuits with controlled switches is crucial for understanding and optimizing their performance.
This article summarizes the efforts of a research group from Taiwan in developing 1500 V breakdown voltage (BV) GaN HEMT devices on engineered substrates.
Infineon’s Marijana Vukicevic discusses the evolving role of MCUs in high-performance motor control and power conversion applications.
In Part 1, we began an overview of gallium nitride–based solutions provided by leading electronic components manufacturers. In this article, we continue our roundup of GaN products by exploring ...