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New Electronics5y
Imec demonstrates Si FinFET CMOS devices - New Electronics
imec has presented a tungsten (W) buried power rail (BPR) integration scheme in a FinFET CMOS test vehicle, which does not impact the CMOS device characteristics. Using this week's 2020 Symposia on ...
Electronics Weekly5y
Imec shows excellent performance of finfet devices with integrated tungsten buried power rails - Electronics Weekly
Imec has shown a tungsten (W) buried power rail (BPR) integration scheme in a FinFET CMOS test vehicle, which does not adversely impact the CMOS device characteristics. When interfacing the BPR with ...
Semiconductor Engineering1y
Fabless Approach To Embed Active Nanophotonics in Bulk CMOS By Co-Designing The BEOL Layers For Optical Functionality (MIT) - Semiconductor Engineering
We introduce a fabless approach to embed active nanophotonics in bulk CMOS by co-designing the back-end-of-line metal layers for optical functionality. Without changing any of the design rules imposed ...
Design-Reuse1y
CEA-Leti Reports Breakthrough 3D Sequential Integration (3DSI) Of CMOS Over CMOS with Advanced Metal Lines
The top CMOS device process was carried out at 500°C in a FEOL 300mm fabrication above state-of-the art CU/ULK 28nm BEOL. "This achievement establishes the feasibility of manufacturing ...
Semiconductor Engineering7y
CMOS-Embedded STT-MRAM Arrays In 2x nm Nodes For GP-MCU Applications - Semiconductor Engineering
A look at array performance and key parameters to meet standard CMOS BEOL requirements. July 20th, 2017 - By: GlobalFoundries Perpendicular Spin-Transfer Torque (STT) MRAM is a promising technology in ...