SiGe heterojunction bipolar transistor (HBT) technology has been widely applicated in microwave communication system since 1987 as first SiGe HBT was invented. In this paper, its development is ...

And while Danfoss and Grundfos may have exited Russia, their legacy lives on, both in schematics still archived in Russia’s procurement system and with the contractors still building to those specs.

By conducting failure simulations on the classic 6T-SRAM model across different transistor process nodes, the bit-flip behavior during read and write operations under failure conditions was observed.