In this inventive twist on the Klon, Robert Keeley switches out the "mythical" diodes for germanium transistors and offers ...

STMicroelectronics’ STGWA30IH160DF2 IGBT combines a breakdown-voltage rating of 1600 V and high thermal performance with ...

An extension to the STPOWER portfolio, this is the first 1600V IGBT in ST’s new IH2-generation. The devices leverage advanced ...

STMicroelectronics is aiming at domestic induction hobs and microwaves with a 1.6kV IGBT in a long lead TO-247 package.

Confused about where to start with compressors and dynamics effects? We'll guide you through the essential features and ...

Compare the Realme GT 7 and Poco F6 Pro to find out which mid-range smartphone offers better performance and features.

Compare the Realme GT 7 and iQOO Z10 Turbo Pro to determine which one delivers better performance, features, and value for ...

AlN metal-semiconductor transistors grown on 2-inch AlN substrates provide a breakdown voltage of more than 2 kV Researchers from Arizona State University are claiming to have fabricated the first AlN ...

Abstract: We demonstrated a tunneling transistor with a stacked floating electrode structure. Tunneling transistors suffer from a poor gate modulation property with large gate leakage current, absence ...