A 5-watt, 10-mc, silicon power transistor has been developed. The device, made by solid-state diffusion, uses the intrinsic-barrier structure. Although primarily designed as a 5-watt, 10-mc oscillator ...

Schottky tunneling source FET (STSFET) is a promising device alternative for future nanometer-scale technology. This paper presents a circuit-level performance evaluation of using STSFET for ...