A world-first N-polar GaN wafer created by Chinese scientists is set to be a game changer for the semiconductor industry.

X-FAB Silicon Foundries, SMART Photonics and Epiphany Design are collaborating to develop a new heterogeneous photonics ...

Silicon Wafers for Nanoparticle Research SOUTH BOSTON, MA, UNITED STATES, March 27, 2025 /EINPresswire / -- As gl ...

X-FAB Silicon Foundries, SMART Photonics, and Epiphany Design are developing a heterogeneous photonics integration platform that combines the strengths of InP and Silicon-on-Insulator (SOI) ...

Interferometers, devices that can modulate aspects of light, play the important role of modulating and switching light ...

Jiufengshan Laboratory (JFS) announced two major breakthroughs in GaN technology: the world's first 8-inch silicon-based ...

Interferometers, devices that can modulate aspects of light, play the important role of modulating and switching light ...

Researchers demonstrate scalable integration of graphene and GaN devices using van der Waals forces, enabling high-performance CMOS-compatible electronics.

Called a Cascaded-mode interferometer, it is a single waveguide on a silicon-on-insulator platform that can create multiple ...

EAST FISHKILL, N.Y., Sept. 18, 2009-- IBM has successfully developed a prototype of the semiconductor industry's smallest, densest and fastest on-chip dynamic memory device in next-generation, ...

Called a cascaded-mode interferometer, it is a single waveguide on a silicon-on-insulator platform that can create multiple signal paths to control the amplitude and phase of light simultaneously ...