Researchers have announced the demonstration of high-speed spin-orbit-torque magnetoresistive random access memory cell compatible with 300 mm Si CMOS technology.

Built using their proprietary Eye-On-Si CMOS imaging technology, the 1600 x 1200 pixel Sapphire CMOS image sensor is Teledyne e2v’s newest product from the Sapphire chip family.

By demonstrating those values, repeatedly and reproducibly, on a 300mm Si MOS quantum dot process, it should be possible to make large-scale quantum computers based on Si quantum dots. Si quantum dot ...

The Sapphire CMOS is a 1.3 million pixel image sensor, based on Teledyne e2v’s proprietary Eye-On-Si CMOS imaging technology. It is the perfect choice for any application where peak performance is key ...

As a first part of my Ph.D. work, I evaluated this promising contact scheme in terms of contact resistivity and CMOS compatibility—for 7nm and beyond CMOS. I screened several insulator materials ...

Most notably, the presented device concept and the Al-Si material system are potentially compatible with the state-of-the-art complementary metal-oxide-semiconductor (CMOS) processing technology, ...

Researchers at Tohoku University have announced the demonstration of high-speed spin-orbit-torque (SOT) magnetoresistive random access memory cell compatible with 300 mm Si CMOS technology. The ...