Researchers have created a next-generation RAM that can process data 10,000 times faster than anything we have right now.

In a groundbreaking advancement, a team of Chinese researchers at Fudan University in Shanghai, has developed a flash memory ...

A team of Chinese scientists has developed a groundbreaking flash memory device capable of storing data at an unprecedented ...

Researchers at Fudan University have announced a breakthrough in flash memory with what they claim is the fastest device ever ...

By re-configuring the architecture of flash memory, researchers have managed to achieve unprecedented data write and read ...

Rice-sized memory device breaks speed barrier once thought impossible, capable of erasing and rewriting data 100,000 times ...

Poxiao”, or Dawn, is the fastest flash memory ever created. It can erase and rewrite data in 400 picoseconds. Memory on the ...

A research team at Fudan University has built the fastest semiconductor storage device ever reported, a non‑volatile flash ...

A Chinese research team has developed a revolutionary flash memory device that can store data at a speed of one bit ...

Researchers from Shanghai-based Fudan University have developed a picosecond-level flash memory device with an unprecedented ...