Altimime presented a flash memory roadmap that shows conventional floating-gate flash changing to so-called SONOS flash with a vertical 8-layer stacked structure at 17-nm. The stacking could increase ...

RRAM exhibits lower programming currents than phase-change memory or PRAM, the company said. Compared to MRAM, RRAM has a simpler, smaller cell structure. MRAM has a 16F 2 structure, while 4DS makes ...

Due to its simple three-layer structure, Crossbar technology can be stacked in 3D, delivering multiple terabytes of storage on a single chip. Its simplicity, stackability and CMOS compatibility enable ...

Resistive random-access memory (RRAM) is a highly attractive form of RAM, as it promises low-power usage with stable long-term storage, even in the absence of external power. Finding the right mate… ...