ST’s embedded Phase-Change Memory (ePCM) has the best power, performance, area (PPA) index of NVM technologies such as RRAM, MRAM ... An integrated device manufacturer, we work with more ...

ONT, which was IP Group’s largest holding at end-2024 (13% of portfolio value), offers a new generation of nanopore-based sensing technology, enabling the real-time, high-performance, accessible and ...

Then the device fetches the submission command from the host memory. The submission command is executed according ... such as 3DXP, NVRAM, MRAM or RRAM. IP-Maker has implemented a full hardware ...

The innovative solution addresses a critical challenge in automotive development by offering a single device with ... compared to other memory technologies, such as RRAM and MRAM." ...

STMicroelectronics has announced Stellar with xMemory, a new generation of extensible memory embedded into its Stellar series of automotive MCUs. This technology will transform the challenging process ...

Notes: 1. ECRAM(Electrochemical Random-Access Memory): An electrochemical memory device whose channel conductivity varies according to the concentration of ions within the channel. This behavior ...

Researchers at Fudan University develop a picosecond-level flash memory device in their lab. GAO ERQIANG/CHINA DAILY Researchers from Fudan University in Shanghai have developed a picosecond-level ...

A team of Chinese scientists has developed a groundbreaking flash memory device capable of storing data at an unprecedented speed, according to state media reports. Operating at a rate of one bit ...

A Chinese research team has developed a revolutionary flash memory device that can store data at a speed of one bit per 400 picoseconds, setting a new record for the fastest semiconductor storage ...