Thus, RRAM is robust and efficient for both code storage and data logging in the same memory device. Through optimizations such as byte re-writability and eliminating erase operations during data ...

However, a drawback of RRAM fabrication is that the memory device is not in one of the two electrical resistance states needed for operation. A high forming current is required to set the memory ...

The team created a memory storage device that can operate as an RRAM and an LEM at the same time, using just perovskite. A microscope image of the different layers of the new memory device ...

This work addresses the RRAM concept from materials, device, circuit, and application viewpoints, focusing on the physical device properties and the requirements for storage and computing applications ...

Researchers at Purdue University engineered this device in collaboration with the ... possibilities is resistive random access memory, or RRAM for short. In RRAM, an electrical current is ...

Typically, in digital memory, a state of high voltage corresponds to a 1, and low voltage to a 0. To get an RRAM device to switch states, you apply a voltage across metal electrodes hooked up to two ...

RRAM, a form of nonvolatile memory that is not available commercially ... vice president of device engineering at Crossbar. The company on Monday announced a RRAM array for servers and appliances ...

oxide RRAM data storage with a piezoelectric ceramic element that served both as pressure sensor and power supply. The current generated by the piezo element is used to power the memory device and ...

This device is known as ferroelectric RAM or FeRAM. It is non-volatile like flash memory, meaning the device remembers the information even when the power is off in the form of polarization.