Experimental data and discussion are presented which show the desirability of using thick punch-through PIN diode for high-power limiting. The slower speed of response sets an upper limit on thickness ...

This work describes the design of a compact, 60 GHz, SPDT switch implemented using PIN diodes in a 130 nm SiGe BiCMOS technology. The SPDT RF switch employs a novel shunt-series topology with a ...