In this study, we compare the complementary TFET (CTFET) with complementary metal oxide semiconductor (CMOS) at low temperatures (70K) by using the Gate-All-Around (GAA) architecture. The experiment ...

Here it is used as a mixer, with the oscillator signal injected via the screen grid. Aside from that, the simple circuit consists of a receiving coil, a few resistors and a variable capacitor.

a solution to future generations of OCT that provides a dedicated camera platform using CMOS technology that speeds up image acquisition while also improving image quality.

The present IP is a high precision Ring Oscillator. Its output frequency is set to be 100MHz. CTRIM [5:0] and FTRIM[3:0] are used for process variatio ...

📂 Project List NMOS and PMOS Characteristics – Analysis of I-V characteristics for NMOS and PMOS transistors using DC sweep simulations. Design and Analysis of CMOS Inverter – Transient and DC ...

The uncertainty lies in the frequency parameter $\omega$, assumed to follow a uniform distribution $\mathcal{U}(0.95, 1.05)$. The goal is to estimate the mean and ...

Key Laboratory for the Physics and Chemistry of Nanodevices, Center for Carbon-Based Electronics, School of Electronics, Peking University, Beijing 100871, China Academy for Advanced Interdisciplinary ...