Cambridge scientists have developed a new prototype for computer memory that could make for faster chips that could hold up to 100 times more data. The system is made up of barium bridges between ...

Researchers from the Institute of Science Tokyo proposed a time-division Multiple-Input Multiple-Output (MIMO) technology for ...

Resistive switching in memristive devices typically involves the formation of localized conductive paths within an insulating layer. These conductive filaments (CFs) are often associated with the ...

Our theory successfully explains almost all experimentally observed phenomena including bipolar and unipolar switching. The theory suggests that resistive switching is an intrinsic property of the ...

Resistive switching memory is a promising contender for next-generation memory device due to its advantages of simple structure and low power consumption.

The formation and retraction of nickel filaments along boron defects in the h-BN film as the resistive switching mechanism is proposed. The electrical data are corroborated with TEM analyses to ...

Science Advances (2023). Abstract A design concept of phase-separated amorphous nanocomposite thin films is presented that realizes interfacial resistive switching (RS) in hafnium oxide–based devices.

Scientists at Argonne National Laboratory have created a “bimetallic” optical switch with the potential to bring dramatic efficiencies to how data is transmitted and stored, according to a recent ...