Cambridge scientists have developed a new prototype for computer memory that could make for faster chips that could hold up to 100 times more data. The system is made up of barium bridges between ...

A technical paper titled “Thin-film design of amorphous hafnium oxide nanocomposites enabling strong interfacial resistive switching uniformity” was published by researchers at University of Cambridge ...

This study presents an optical method enhanced by plasmonic effects to observe resistive switching in hBN-based memristors in real time. The device consists of a vertical two-terminal structure ...

A new technical paper titled “Resistive Switching and Current Conduction Mechanisms in Hexagonal Boron Nitride Threshold Memristors with Nickel Electrodes” was published by researchers at RWTH Aachen ...