Abstract: In this work, we present a novel non-volatile spin transfer torque (STT) assisted spin-orbit torque (SOT) based ternary content addressable memory (TCAM) with 5 transistors and 2 magnetic ...

Abstract: Resistive RAM (ReRAM)-based in-memory computing (IMC) is a promising alternative to traditional architectures for achieving energy-efficient and high-performance computing. This study ...

4DS share price dives 67pc after coming out of trading halt Board orders strategic review, puts tech development on ice imec and Infineon ties cut as execs depart There’s nothing like a trading halt ...

The board of 4DS Memory (ASX: 4DS) has decided to take a strategic three-month pause to decide its future direction after an extensive analysis of its Sixth Platform Lot memory technology. Results ...

The ASX was up 0.5% at Friday lunchtime in the east. Wall Street had done the heavy lifting overnight, thanks to weaker US jobs numbers that traders twisted into a green light for a September Fed cut.

Wyss Institute for Biologically Inspired Engineering, Harvard University, Boston, Massachusetts 02215 United States Brigham and Woman’s Hospital, Department of Medicine, Division of Engineering in ...

It’s a familiar promise: memory capable of retaining its content like flash memory, but with the speed of DRAM. Intel and a slew of startups have tried and failed at the product, but a UK startup may ...

A new technical paper titled “SOT-MRAM Bitcell Scaling with BEOL Read Selectors: A DTCO Study” was published by researchers at imec, Leuven, and 3001 Belgium. “This work explores the cross-node ...

Resistive random access memory (ReRAM), which is based on oxide materials, is gaining attention as a next-generation memory and neuromorphic computing device. Its fast speeds, data retention ability, ...

Department of Semiconductor Systems Engineering, Sejong University, 209, Neungdong-ro, Gwangjin-gu 05006, Seoul, Republic of Korea ...