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In this study, we proposed a novel p-GaN/p-AlGaN/AlGaN/GaN heterojunction field-effect transistor (HFET). When a selective etching process is used to precisely etch the p-GaN layer of a conventional p ...

Abstract: Recently, the use of insulating substrates has emerged as a viable option for the fabrication of GaN power transistors exceeding 1 kV. Such structures are of interest because no doped buffer ...