EPC Space has launched the EPC7030MSH, a 300-V radiation-hardened GaN FET. The solution delivers a high power current rating, setting a new benchmark for satellite power and propulsion applications.

Integrating the Schottky diode into a GaN transistor helps boost power-system efficiency by reducing dead-time losses.

NFL power ranking experts seemingly are growing more skittish about the Bills' prospects ahead of this weekend's wild card game.

EPC has launched the 50V, 8.5 mΩ EPC2057. This GaN FET is specifically designed to meet the evolving needs of high-power USB-C devices including those used in consumer electronics, in-car charging, ...

Nielsen rankers for the 2023-24 TV season in total viewers and adults 18-49: CBS' freshman "Tracker," as well as football, 'Survivor,' game shows and a 'Golden Bachelor' lead this unusual, strike ...

Here’s a RoundUp of this week’s must-read articles – we’ll delve into the latest developments on GaN, Hydrogen Fuel Cell, Nanowell FET!

Despite a slow year in 2023, Taiwan-based MOSFET companies anticipate sales will return to growth in 2024 and are optimistic that AI PCs will revitalize the PC market.

Allegro MicroSystems has introduced its newest device, the AHV85110 Power-Thru isolated gate driver. As the first member of Allegro’s Power-Thru product family, the AHV85110 promises to deliver twice ...