This paper demonstrated high-output-power and high-efficiency power amplifier (PA) monolithic microwave-integrated circuit (MMIC) at 300-GHz band (252–296 GHz) with the use of InPbased ...

EPC Space has launched the EPC7030MSH, a 300-V radiation-hardened GaN FET. The solution delivers a high power current rating, setting a new benchmark for satellite power and propulsion applications.

“The EPC7030MSH 300V RH GaN FET delivers high current and rad-hard reliability, meeting the rigorous demands of higher-voltage space power architectures and simplifying thermal design for our ...

EPC Space has introduced the EPC7030MSH, a 300 V radiation-hardened (RH) gallium nitride (GaN) field-effect transistor (FET) that sets a new benchmark for performance in high-voltage, high-power space ...

Dynamic Vgs-Id monitoring system for junction temperature estimation for MOS gate power semiconductors Condition monitoring of power devices during operation is gaining importance as demand for ...

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