Gallium nitride (GaN)-based high electron mobility transistors (HEMTs) are a type of field-effect transistors (FETs) designed to operate at very high frequencies with low noise. As such, they have ...

Researchers in China say they have found a way to eliminate one of the biggest obstacles facing magnetic levitation (maglev) ...

One of the most effective methods to reduce EMI in high-frequency cables is shielding. High-frequency signals tend to radiate ...

Mumbai: A total of 3.77 lakh noise barrier panels have been installed along the Mumbai-Ahmedabad Bullet Train route in Gujarat, covering 188 kilometers of the viaduct.

High-speed ADCs can achieve 2 or more gigasamples per second with 10-bit, 12-bit, or even higher bit resolution, allowing for precise registration of both timing and amplitude of the pulses.