Thus, using double gate architecture in vertical gate 3-D NAND is favorable. Furthermore, when pitch is scaled in the future, device exhibiting smaller channel thickness should be used to increase the ...

May 30, 2019 – Avery Design Systems Inc ... of SimCluster GLS that performs gate-level parallel simulation to achieve 3-5X speed up of sign-off simulations. “As chips get larger the feasibility of ...

Abstract: A method is proposed to design wideband low-noise amplifiers (LNAs) made of cascaded common-gate (CG) and common-source (CS) stages with a parallel-to-series resonant interstage matching ...