In traditional CMOS technology, metal-semiconductor (MS) contact schemes, with transition-metal silicides (such as nickel (Ni) silicides) on the metal side, are used to form the source/drain contacts.

Due to the improved contact interface, 2D semiconductor transistors fabricated using this technique exhibited more than 95% reduction in off-state current and a 50% decrease in subthreshold swing ...

Researchers have found a way to make the chip design and manufacturing process much easier — by tapping into a hybrid blend ...

Coplanar semiconductor–metal circuitry defined on few-layer MoTe2 via polymorphic heteroepitaxy. Nature Nanotechnology, 2017; DOI: 10.1038/NNANO.2017.161 ...

In a paper recently published in the open-access journal ACS Applied Energy Materials, researchers studied the usage of polymeric films of polyethylenimine (PEI) for interfacial enhancement of ...

Charge transport in hybrid silicon solar cells Date: August 17, 2015 Source: Helmholtz-Zentrum Berlin für Materialien und Energie Summary: A surprising discovery has been made about hybrid ...

2nd course in the Active Optical Devices SpecializationInstructor: Juliet Gopinath, Ph.D., ProfessorThis course dives into nanophotonic light-emitting devices and optical detectors, including metal ...

Contact resistance at the interface between the semiconductor and metallic MoTe2 is shown to be very low. Barrier height was lowered by a factor of 7, from 150meV to 22meV.