Analyze metal-semiconductor contact at equilibrium and under bias, capacitance and current characteristics, non-rectifying contact and surface effects. Work through sophisticated analysis and ...

Specifically, 2D electrical devices fabricated using this technique had sharp metal-semiconductor contact interfaces, with smooth and clear vdW gaps at the interface and no metal atom doping on ...

The major issue for 2D FET transistors is the existence of a large contact resistance at the interface between the 2D semiconductor and any bulk metal. To address this, the team devised a new ...

Prior knowledge needed: ECEA 5630 Semiconductor Physics, ECEA 5631 Diode Junction and Metal Semiconductor Contact, Understanding of active semiconductor devices, basic electronics, Circuits & Systems ...

Closer metal-semiconductor contact enhanced light absorption at the junction, which strengthened the static field and nonlinear growth of second harmonic generation. This nonlinear optical effect ...

In this study, the team investigated the benefits of b-PEI as an electron-selective contact and proposed a clearer understanding of its functionality incorporating dipole layer conduction mechanisms ...